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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes from wholesalers
     
    Buy cheap DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes from wholesalers
    • Buy cheap DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes from wholesalers

    DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

    Ask Lasest Price
    Brand Name : TOSHIBA
    Model Number : DF2B29FUH3F
    Certification : CE/ RoHS
    Price : To be negotiated
    Payment Terms : T/T, Western Union ,paypal
    Supply Ability : 10,000PCS
    Delivery Time : in stock 2-3days
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    DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

    DF2B29FUH3F TVS DIODE 24VWM SOD323 47VC ESD Protection Diodes Silicon Epitaxial Planar


    1.ApplicationsESD Protection
    Note:This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
    purpose, including, but not limited to, voltage regulation.
    2.Features
    (1) AEC-Q101 qualified (Note 1)
    Note 1:
    For detail information, please contact to our sales.
    Note:
    Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
    significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
    if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
    Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
    ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
    report and estimated failure rate, etc).
    Note 1: According to IEC61000-4-2.
    Note 2: According to ISO10605. (@ C = 330 pF, R = 2 kΩ)
    Note 3: According to IEC61000-4-5.
    Note 1: Based on IEC61000-4-5 8/20µs pulse.
    Note 2: TLP parameter: Z0 = 50Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
    extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 8 A to 16 A.
    Note 3: Guaranteed by design.
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