MT46H32M16LFBF-6IT-C Program ic chip Color TV Ic Memory Flash Chip
Rectifier Diode
Mobile Double Data Rate (DDR) SDRAM MT46H32M16LF – 8 Meg x 16 x 4
Banks MT46H16M32LF – 4 Meg x 32 x 4 Banks
FEATURES:
• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data
accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for
WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data–one mask per byte
• Programmable burst leCM GROUPhs: 2, 4, 8, 16 or full page
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS compatible inputs
• On-chip temperature sensor to control refresh rate
• Partial array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
• Clock stop capability
Options Marking
• VDD/VDDQ
• 1.8V/1.8V H
• Configuration
• 32 Meg x 16(8 Meg x 16 x 4 banks) 32M16
• 16 Meg x 32 (4 Meg x 32 x 4 banks) 16M32
• Plastic Package
• 60-Ball VFBGA1 TBD
• 90-Ball VFBGA 2
• Timing – Cycle Time
• 6ns @ CL = 3 -6
• 7.5ns @ CL = 3 -75
• 10ns @ CL = 3 -10
• Operating Temperature Range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C) None IT
| ABSOLUTE MAXIMUM RATINGS(1) |
Supply Voltage (VIN)..........................................–0.3V
to 6V
Fault Flag Voltage
(VFLG)..............................................+6V
Fault Flag Current
(IFLG)............................................. 25mA
Output Voltage
(VOUT)...................................................+6V
Output Current (IOUT) ............................... Internally
Limited Enable Input (IEN).....................................
–0.3V to VIN +3V
Storage Temperature (TS) ........................ –65°C to +150°C
Supply Voltage (VIN) ................................... +2.7V to
+5.5V
Ambient Temperature (TA).......................... –40°C to +85°C
Junction Temperature (TJ)........................ Internally
Limited
Thermal Resistance SOP (θJA)
..........................................................160°C/W
MSOP(θJA)
........................................................206°C/W |
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