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BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch

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    Buy cheap BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch from wholesalers
     
    Buy cheap BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch from wholesalers
    • Buy cheap BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch from wholesalers

    BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch

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    Brand Name :
    Model Number : BTS432E2
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7900pcs
    Delivery Time : 1 day
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    BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch


    PROFET® BTS 432 E2

    Smart Highside Power Switch


    Features

    • Load dump and reverse battery protection1)

    • Clamp of negative voltage at output

    • Short-circuit protection

    • Current limitation

    • Thermal shutdown

    • Diagnostic feedback

    • Open load detection in ON-state

    • CMOS compatible input

    • Electrostatic discharge (ESD) protection

    • Loss of ground and loss of Vbb protection2)

    • Overvoltage protection

    • Undervoltage and overvoltage shutdown with autorestart and hysteresis


    Application

    • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

    • All types of resistive, inductive and capacitve loads

    • Replaces electromechanical relays and discrete circuits


    Product Summary

    VLoad dump 80 V

    Vbb-VOUT Avalanche Clamp 58 V

    Vbb (operation) 4.5 ... 42 V

    Vbb (reverse) -32 V

    RON 38 mΩ

    IL(SCp) 44 A

    IL(SCr) 35 A

    IL(ISO) 11 A


    General Description

    N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.


    Maximum Ratings at Tj = 25 °C unless otherwise specified

    ParameterSymbolValuesUnit
    Supply voltageVbb63V

    Load dump protection VLoadDump = UA + Vs, UA = 13.5 V

    RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high

    Vs 3)66.5V
    Load currentILself-limitedA

    Operating temperature range

    Storage temperature range

    Tj

    Tstg

    -40 ...+150

    -55 ...+150

    °C
    Power dissipation (DC)Ptot125W

    Inductive load switch-off energy dissipation,

    single pulse Tj=150 °C:


    EAS


    1.7


    J

    Electrostatic discharge capability (ESD) (Human Body Model)VESD2.0kV

    Input voltage (DC)

    Current through input pin (DC)

    Current through status pin (DC)

    VIN

    IIN

    IST

    -0.5 ... +6

    ±5.0

    ±5.0

    V

    mA


    Thermal resistance chip - case:

    junction - ambient (free air):

    SMD version, device on pcb4):

    RthJC

    RthJA


    ≤ 1

    ≤ 75

    ≤ tbd

    K/W

    Package and Ordering Code

    All dimensions in mm


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