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NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor from wholesalers
     
    Buy cheap NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor from wholesalers
    • Buy cheap NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor from wholesalers

    NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

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    Brand Name : FAIRCHILD
    Model Number : NDS356AP
    Certification : Original Factory Pack
    Price : Negotiate
    Payment Terms : T/T, Western Union,Paypal
    Supply Ability : 20000
    Delivery Time : 1
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    NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor


    NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor


    General Description

    SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.


    Features

    ►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V

    RDS(ON) = 0.2 W @ VGS=-10 V.

    ►Industry standard outline SOT-23 surface mount package

    using proprietary SuperSOTTM-3 design for superior thermal

    and electrical capabilities.

    ►High density cell design for extremely low RDS(ON).

    ►Exceptional on-resistance and maximum DC current capability.


    Absolute Maximum Ratings TA = 25°C unless otherwise noted

    SymbolParameterNDS356APUnits
    VDSSDrain-Source Voltage-30V
    VGSSGate-Source Voltage - Continuous±20V
    IDMaximum Drain Current - Continuous±1.1A
    PDMaximum Power Dissipation0.5W
    TJ ,TSTGOperating and Storage Temperature Range-55 to 150°C

    Quality NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor for sale
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