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IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH from wholesalers
     
    Buy cheap IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH from wholesalers
    • Buy cheap IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH from wholesalers

    IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

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    Brand Name :
    Model Number : IRFP4229PBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7600pcs
    Delivery Time : 1 day
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    IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH


    IRFP4229PbF PDP SWITCH


    Features

    • Advanced Process Technology

    • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

    • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

    • Low QG for Fast Response

    • High Repetitive Peak Current Capability for Reliable Operation

    • Short Fall & Rise Times for Fast Switching

    • 175°C Operating Junction Temperature for Improved Ruggedness

    • Repetitive Avalanche Capability for Robustness and Reliability


    Description

    This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.


    Absolute Maximum Ratings

    ParameterMax.Units
    VGSGate-to-Source Voltage±30V
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V44A
    ID @ TC = 100°CContinuous Drain Current, VGS @ 10V31A
    IDMPulsed Drain Current180A
    IRP @ TC = 100°CRepetitive Peak Current87A
    PD @TC = 25°CPower Dissipation310W
    PD @TC = 100°CPower Dissipation150W
    Linear Derating Factor2.0W/°C
    TJ , TSTGOperating Junction and Storage Temperature Range-40 to + 175°C
    Soldering Temperature for 10 seconds300°C
    Mounting Torque, 6-32 or M3 Screw10lbin (1.1Nm)N

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