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IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET from wholesalers
     
    Buy cheap IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET from wholesalers
    • Buy cheap IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET from wholesalers

    IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET

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    Brand Name :
    Model Number : IRF640NPBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7900pcs
    Delivery Time : 1 day
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    IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET


    IRF640NPbF

    IRF640NSPbF

    IRF640NLPbF


    HEXFET® Power MOSFET


    • Advanced Process Technology
    • Dynamic dv/dt Rating
    • 175°C Operating Temperature
    • Fast Switching
    • Fully Avalanche Rated
    • Ease of Paralleling
    • Simple Drive Requirements
    • Lead-Free

    Description

    Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


    The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


    The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

    The through-hole version (IRF640NL) is available for lowprofile application.


    Absolute Maximum Ratings

    ParameterMax.Units
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V18A
    ID @ TC = 100°CContinuous Drain Current, VGS @ 10V13A
    IDMPulsed Drain Current72A
    PD @TC = 25°CPower Dissipation150W
    Linear Derating Factor1.0W/°C
    VGSGate-to-Source Voltage± 20V
    EASSingle Pulse Avalanche Energy247mJ
    IARAvalanche Current18A
    EARRepetitive Avalanche Energy15mJ
    dv/dtPeak Diode Recovery dv/dt8.1V/ns
    TJ, TSTGOperating Junction and Storage Temperature Range-55 to +175°C
    Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
    Mounting torque, 6-32 or M3 srew10 lbfïin (1.1Nïm)

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