IRFP9140N Transistor Components ,electronic devices and integrated
circuits
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole.
Features
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l P-Channel l Fast Switching
l Fully Avalanche Rated
| C.I MM74HC164MX | FSC | P0552AD/P9FAD | SOP-14 |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| RES 2010 330R 5% CRCW2010330RJNEF | VISHAY | 1612 | SMD2010 |
| RES 2010 68K 5% CRCW201068K0JNEF | VISHAY | 1612 | SMD2010 |
| C.I MCP6S26-I/SL | MICROCHIP | 16255C4 | SOP-14 |
| ACOPLADOR. PC817A | SHARP | 2016.08.10/H33 | DIP-4 |
| TRANS 2SS52M | Honeywell | 2SSM/523-LF | TO-92 |
| C.I SCC2691AC1D24 | | 1149+ | SOP-24 |
| C.I TP3057WM | TI | XM33AF | SOP-16 |
| C.I CD14538BE | TI | 33ADS8K | DIP-16 |
| C.I CL2N8-G | MICROCHIP | CL2C | SOT-89 |
| C.I SN75179BP | TI | 57C50DM | DIP-8 |
| C.I L6219DS | ST | 135 | SOP-24 |
| CAP 1210 470PF 1KV NP0 CL32C471JIINNNE | SAMSUNG | AC7JO2H | SMD1210 |
| INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF | TDK | YA16H0945122/3R3 | SMD6045 |
| CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR | PAN | Y1628F843536/2.2/50V/SYK | SMD4*5.4 |
| C.I 24LC256-I/SN | MICROCHIP | 1636M6G | SOP-8 |
| CAP ELCO SMD 150UF 25V UCD1E151MNL1GS | NICHICON | 160602/150/25V/H72 | SMD8*10.5 |
| RES RC0805JR-0727RL | YAGEO | 1538 | SMD0805 |
| C.I SN75240PW | TI | 11/A75240 | MSOP-8 |
| RES RC0805JR-0715KL | YAGEO | 1637 | SMD0805 |
| CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T | TAIYOYUDEN | 1608 | SMD0805 |
| CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE | SAMSUNG | AC7JO2H | SMD0805 |
| RES 0805 28K7 RC0805FR-0728K7L 1% | YAGEO | 1638 | SMD0805 |
| RES 3K3 5% CASE 0805RC0805JR-073K3L | YAGEO | 1623 | SMD0805 |
| TRIAC BTA26-600BRG | ST | 628 | TO-3P |
| CAP 0805 330NF 100V C2012X7S2A334K125AB | TDK | IB16F15763SD | SMD0805 |
Continuous Drain Current, VGS @ -10V -23 ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V -16 A
IDM Pulsed Drain Current
-76 PD @TC = 25°C
Power Dissipation 140 W Linear Derating Factor 0.91 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy
430 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 14 mJ dv/dt
Peak Diode Recovery dv/dt
-5.0 V/ns
TJ Operating Junction and -55 to + 175 TSTG
Storage Temperature Range Soldering Temperature, for 10 seconds 300
(1.6mm from case ) °C
