IRF2807 Transistor Flash Ic Integrated circuit Chip IC Electronics Power MOSFET

Output Features:

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l P-Channel l Fully Avalanche Rated

Key Specifications:

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

Absolute Maximum Ratings

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

82‡ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 58 A

IDM Pulsed Drain Current  280 PD @TC = 25°C

Power Dissipation 230 W Linear Derating Factor 1.5 W/°C

VGS Gate-to-Source Voltage ± 20 V

IAR Avalanche Current 43 A

EAR Repetitive Avalanche Energy 23 mJ dv/dt

Peak Diode Recovery dv/dt ƒ 5.9 V/ns TJ

Operating Junction and -55 to + 175

TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

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